IRFI4510G MOSFET
Specifications of IRFI4510G MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 13.5 mΩ
- Continuous Drain Current: 35 A
- Total Gate Charge: 54 nC
- Power Dissipation: 42 W
- Package: TO-220 FULLPAK (ISO)