IRFI530N MOSFET
Specifications of IRFI530N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 110 mΩ
- Continuous Drain Current: 11 A
- Total Gate Charge: 29.3 nC
- Power Dissipation: 33 W
- Package: TO-220 FULLPAK (ISO)