IRFI4110G MOSFET
Specifications of IRFI4110G MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 4.5 mΩ
- Continuous Drain Current: 72 A
- Total Gate Charge: 190 nC
- Power Dissipation: 61 W
- Package: TO-220 FULLPAK (ISO)