IRF8306M MOSFET

Specifications of IRF8306M MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 2.5 mΩ
  • Continuous Drain Current: 140 A
  • Total Gate Charge: 25 nC
  • Power Dissipation: 75 W
  • Package: DIRECTFET MX

Pinout of IRF8306M

IRF8306M pinout

Replacement and Equivalent of IRF8306M Transistor

You can replace the IRF8306M with the IRF6724M, IRF6725M, IRF6727M, IRF6728M, IRF6729M, IRF7946, IRF8302M, IRF8304M, IRF8308M