IRF8302M MOSFET

Specifications of IRF8302M MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1.8 mΩ
  • Continuous Drain Current: 190 A
  • Total Gate Charge: 35 nC
  • Power Dissipation: 104 W
  • Package: DIRECTFET MX

Pinout of IRF8302M

IRF8302M pinout

Replacement and Equivalent of IRF8302M Transistor

You can replace the IRF8302M with the IRF6729M