IRF8304M MOSFET
Specifications of IRF8304M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 2.2 mΩ
- Continuous Drain Current: 170 A
- Total Gate Charge: 28 nC
- Power Dissipation: 100 W
- Package: DIRECTFET MX