IRF6729M MOSFET
Specifications of IRF6729M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.8 mΩ
- Continuous Drain Current: 190 A
- Total Gate Charge: 42 nC
- Power Dissipation: 104 W
- Package: DIRECTFET MX
Pinout of IRF6729M
