IRF6678 MOSFET

Specifications of IRF6678 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 2.2 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 43 nC
  • Power Dissipation: 89 W
  • Package: DIRECTFET MX

Pinout of IRF6678

IRF6678 pinout

Replacement and Equivalent of IRF6678 Transistor

You can replace the IRF6678 with the IRF6635, IRF6725M, IRF6727M, IRF6729M, IRF7946, IRF8302M, IRF8304M