IRF630N MOSFET
Specifications of IRF630N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 300 mΩ
- Continuous Drain Current: 9.5 A
- Total Gate Charge: 23.3 nC
- Power Dissipation: 82 W
- Package: TO-220AB
Pinout of IRF630N
Replacement and Equivalent of IRF630N Transistor
You can replace the IRF630N with the
IRF640,
IRF640N,
IRF640PBF,
IRF644,
IRF740,
IRF740A,
IRF740B,
IRF740LC,
IRFB13N50A,
IRFB17N50L,
IRFB23N20D,
IRFB260N,
IRFB31N20D,
IRFB38N20D,
IRFB4020,
IRFB4127,
IRFB4227,
IRFB4229,
IRFB4233,
IRFB42N20D,
IRFB4332,
IRFB4620,
IRFB5620
