IRFB31N20D MOSFET

Specifications of IRFB31N20D MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 82 mΩ
  • Continuous Drain Current: 31 A
  • Total Gate Charge: 70 nC
  • Power Dissipation: 200 W
  • Package: TO-220AB

Pinout of IRFB31N20D

IRFB31N20D pinout

Replacement and Equivalent of IRFB31N20D Transistor

You can replace the IRFB31N20D with the IRFB38N20D, IRFB4229, IRFB4233, IRFB42N20D, IRFB4332