IRFB42N20D MOSFET
Specifications of IRFB42N20D MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 55 mΩ
- Continuous Drain Current: 42.6 A
- Total Gate Charge: 91 nC
- Power Dissipation: 300 W
- Package: TO-220AB