STD02P Bipolar Transistor

Characteristics of STD02P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 5000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO2

Pinout of STD02P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD02P transistor can have a current gain of 5000 to 20000. The gain of the STD02P-O will be in the range from 5000 to 12000, for the STD02P-Y it will be in the range from 8000 to 20000.

Equivalent circuit

STD02P equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the STD02P is the STD02N.

Replacement and Equivalent for STD02P transistor

You can replace the STD02P with the STD03P.
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