SS8050C Bipolar Transistor

Characteristics of SS8050C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 120 to 200
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of SS8050C

The SS8050C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The SS8050C transistor can have a current gain of 120 to 200. The gain of the SS8050 will be in the range from 85 to 300, for the SS8050B it will be in the range from 85 to 160, for the SS8050D it will be in the range from 160 to 300.

Complementary PNP transistor

The complementary PNP transistor to the SS8050C is the SS8550C.

SMD Version of SS8050C transistor

The FMMT449 (SOT-23), MPS8050S (SOT-23) and MPS8050S-C (SOT-23) is the SMD version of the SS8050C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for SS8050C transistor

You can replace the SS8050C with the MPS650, MPS650G, MPS8050 or MPS8050C.
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