MPS8050S-D Bipolar Transistor
Characteristics of MPS8050S-D Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 25 V
- Collector-Base Voltage, max: 40 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 160 to 300
- Transition Frequency, min: 190 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular MPS8050D transistor
Pinout of MPS8050S-D
Classification of hFE
Marking
Complementary PNP transistor
MPS8050S-D Transistor in TO-92 Package
Replacement and Equivalent for MPS8050S-D transistor
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