MPS8050B Bipolar Transistor

Characteristics of MPS8050B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 160
  • Transition Frequency, min: 190 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of MPS8050B

The MPS8050B is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The MPS8050B transistor can have a current gain of 85 to 160. The gain of the MPS8050 will be in the range from 85 to 300, for the MPS8050C it will be in the range from 120 to 200, for the MPS8050D it will be in the range from 160 to 300.

Complementary PNP transistor

The complementary PNP transistor to the MPS8050B is the MPS8550B.

SMD Version of MPS8050B transistor

The MPS8050S (SOT-23) and MPS8050S-B (SOT-23) is the SMD version of the MPS8050B transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MPS8050B transistor

You can replace the MPS8050B with the MPS650, MPS650G, SS8050 or SS8050B.
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