NTE196 Bipolar Transistor

Characteristics of NTE196 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 70 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of NTE196

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE196 is the NTE197.

Replacement and Equivalent for NTE196 transistor

You can replace the NTE196 with the 2N6292, 2N6292G, 2N6293, 2N6488, 2N6488G, BD709, BD711, BD743B, BD743C, BD799, BD801, BD809, BD909, BD911, BDT93, BDT93F, BDT95, BDT95F or BDX77.
If you find an error please send an email to mail@el-component.com