MPS8050S-B Bipolar Transistor

Characteristics of MPS8050S-B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 85 to 160
  • Transition Frequency, min: 190 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular MPS8050B transistor

Pinout of MPS8050S-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The MPS8050S-B transistor can have a current gain of 85 to 160. The gain of the MPS8050S will be in the range from 85 to 300, for the MPS8050S-C it will be in the range from 120 to 200, for the MPS8050S-D it will be in the range from 160 to 300.

Marking

The MPS8050S-B transistor is marked as "BHB".

Complementary PNP transistor

The complementary PNP transistor to the MPS8050S-B is the MPS8550S-B.

MPS8050S-B Transistor in TO-92 Package

The MPS8050B is the TO-92 version of the MPS8050S-B.
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