MPS8550S-B Bipolar Transistor

Characteristics of MPS8550S-B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 85 to 160
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular MPS8550B transistor

Pinout of MPS8550S-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The MPS8550S-B transistor can have a current gain of 85 to 160. The gain of the MPS8550S will be in the range from 85 to 300, for the MPS8550S-C it will be in the range from 120 to 200, for the MPS8550S-D it will be in the range from 160 to 300.

Marking

The MPS8550S-B transistor is marked as "BJB".

Complementary NPN transistor

The complementary NPN transistor to the MPS8550S-B is the MPS8050S-B.

MPS8550S-B Transistor in TO-92 Package

The MPS8550B is the TO-92 version of the MPS8550S-B.
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