MMBT5086 Bipolar Transistor
Characteristics of MMBT5086 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -3 V
- Collector Current − Continuous, max: -0.05 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 150 to 500
- Transition Frequency, min: 40 MHz
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of MMBT5086
Replacement and Equivalent for MMBT5086 transistor
If you find an error please send an email to mail@el-component.com