MJ21196 Bipolar Transistor

Characteristics of MJ21196 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 250 W
  • DC Current Gain (hfe): 25 to 75
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ21196

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ21196 transistor

You can replace the MJ21196 with the MJ21194, MJ21194G or MJ21196G.

Lead-free Version

The MJ21196G transistor is the lead-free version of the MJ21196.
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