MJD3055G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 60 V
• Collector-Base Voltage, max: 70 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 10 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 20 to 100
• Transition Frequency, min: 2 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-252
• Electrically Similar to the Popular MJE3055T transistor
• The MJD3055G is the lead-free version of the MJD3055 transistor

Here is an image showing the pin diagram of this transistor.The MJD3055G transistor is marked as "J3055G".The complementary PNP transistor to the MJD3055G is the MJD2955G.You can replace the MJD3055G with the MJD3055, MJD3055T4 or MJD3055T4G.