MJD3055 Bipolar Transistor

Characteristics of MJD3055 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE3055T transistor

Pinout of MJD3055

Here is an image showing the pin diagram of this transistor.

Marking

The MJD3055 transistor is marked as "J3055".

Complementary PNP transistor

The complementary PNP transistor to the MJD3055 is the MJD2955.

Replacement and Equivalent for MJD3055 transistor

You can replace the MJD3055 with the MJD3055G, MJD3055T4 or MJD3055T4G.

Lead-free Version

The MJD3055G transistor is the lead-free version of the MJD3055.
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