MJD3055T4 Bipolar Transistor

Characteristics of MJD3055T4 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE3055T transistor

Pinout of MJD3055T4

Here is an image showing the pin diagram of this transistor.

Marking

The MJD3055T4 transistor is marked as "J3055".

Replacement and Equivalent for MJD3055T4 transistor

You can replace the MJD3055T4 with the MJD3055, MJD3055G or MJD3055T4G.
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