MJD2955G Bipolar Transistor

Characteristics of MJD2955G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE2955T transistor
  • The MJD2955G is the lead-free version of the MJD2955 transistor

Pinout of MJD2955G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD2955G transistor is marked as "J2955G".

Complementary NPN transistor

The complementary NPN transistor to the MJD2955G is the MJD3055G.

Replacement and Equivalent for MJD2955G transistor

You can replace the MJD2955G with the MJD2955, MJD2955T4 or MJD2955T4G.
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