MJD200G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 25 V
• Collector-Base Voltage, max: 40 V
• Emitter-Base Voltage, max: 8 V
• Collector Current − Continuous, max: 5 A
• Collector Dissipation: 12.5 W
• DC Current Gain (h_fe): 45 to 180
• Transition Frequency, min: 65 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-252
• Electrically Similar to the Popular MJE200 transistor
• The MJD200G is the lead-free version of the MJD200 transistor

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the MJD200G is the MJD210G.You can replace the MJD200G with the MJD200.