MJD200 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 25 V
• Collector-Base Voltage, max: 40 V
• Emitter-Base Voltage, max: 8 V
• Collector Current − Continuous, max: 5 A
• Collector Dissipation: 12.5 W
• DC Current Gain (h_fe): 45 to 180
• Transition Frequency, min: 65 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-252
• Electrically Similar to the Popular MJE200 transistor

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the MJD200 is the MJD210.You can replace the MJD200 with the MJD200G.The MJD200G transistor is the lead-free version of the MJD200.