MJD210G Bipolar Transistor

Characteristics of MJD210G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 45 to 180
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE210 transistor
  • The MJD210G is the lead-free version of the MJD210 transistor

Pinout of MJD210G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJD210G is the MJD200G.

Replacement and Equivalent for MJD210G transistor

You can replace the MJD210G with the MJD210.
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