MJD210 Bipolar Transistor

Characteristics of MJD210 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 45 to 180
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE210 transistor

Pinout of MJD210

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJD210 is the MJD200.

Replacement and Equivalent for MJD210 transistor

You can replace the MJD210 with the MJD210G.

Lead-free Version

The MJD210G transistor is the lead-free version of the MJD210.
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