MJD117-1G Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -100 V
• Collector-Base Voltage, max: -100 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -2 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 1000 to 12000
• Transition Frequency, min: 25 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-251
• Electrically Similar to the Popular TIP117 transistor
• The MJD117-1G is the lead-free version of the MJD117-1 transistor

Here is an image showing the pin diagram of this transistor.The MJD117-1G transistor is marked as "J117G".The complementary NPN transistor to the MJD117-1G is the MJD112-1G.You can replace the MJD117-1G with the MJD117-1, MJD127-1 or MJD127-1G.