MJD112-1G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 2 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 1000 to 12000
• Transition Frequency, min: 25 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-251
• Electrically Similar to the Popular TIP112 transistor
• The MJD112-1G is the lead-free version of the MJD112-1 transistor

Here is an image showing the pin diagram of this transistor.The MJD112-1G transistor is marked as "J112G".The complementary PNP transistor to the MJD112-1G is the MJD117-1G.The FMMT624 (SOT-23) and FZT694B (SOT-223) is the SMD version of the MJD112-1G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the MJD112-1G with the MJD112-1, MJD122-1 or MJD122-1G.