MJD127-1 Bipolar Transistor

Characteristics of MJD127-1 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-251
  • Electrically Similar to the Popular TIP127 transistor

Pinout of MJD127-1

Here is an image showing the pin diagram of this transistor.

Marking

The MJD127-1 transistor is marked as "J127".

Complementary NPN transistor

The complementary NPN transistor to the MJD127-1 is the MJD122-1.

Replacement and Equivalent for MJD127-1 transistor

You can replace the MJD127-1 with the MJD127-1G.

Lead-free Version

The MJD127-1G transistor is the lead-free version of the MJD127-1.
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