MJD117-1 Bipolar Transistor

Characteristics of MJD117-1 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-251
  • Electrically Similar to the Popular TIP117 transistor

Pinout of MJD117-1

Here is an image showing the pin diagram of this transistor.

Marking

The MJD117-1 transistor is marked as "J117".

Complementary NPN transistor

The complementary NPN transistor to the MJD117-1 is the MJD112-1.

Replacement and Equivalent for MJD117-1 transistor

You can replace the MJD117-1 with the MJD117-1G, MJD127-1 or MJD127-1G.

Lead-free Version

The MJD117-1G transistor is the lead-free version of the MJD117-1.
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