MJD112T4G Bipolar Transistor
Characteristics of MJD112T4G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 1000 to 12000
- Transition Frequency, min: 25 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-252
- Electrically Similar to the Popular TIP112 transistor
- The MJD112T4G is the lead-free version of the MJD112T4 transistor
Pinout of MJD112T4G
Marking
SMD Version of MJD112T4G transistor
Replacement and Equivalent for MJD112T4G transistor
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