MJD112T4 Bipolar Transistor

Characteristics of MJD112T4 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 1000 to 12000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular TIP112 transistor

Pinout of MJD112T4

Here is an image showing the pin diagram of this transistor.

Marking

The MJD112T4 transistor is marked as "J112".

SMD Version of MJD112T4 transistor

The FMMT624 (SOT-23) and FZT694B (SOT-223) is the SMD version of the MJD112T4 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJD112T4 transistor

You can replace the MJD112T4 with the MJD112, MJD112G, MJD112T4G, MJD122, MJD122G, MJD122T4 or MJD122T4G.

Lead-free Version

The MJD112T4G transistor is the lead-free version of the MJD112T4.
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