MJ11021 Bipolar Transistor
Characteristics of MJ11021 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -250 V
- Collector-Base Voltage, max: -250 V
- Emitter-Base Voltage, max: -50 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 175 W
- DC Current Gain (hfe): 400 to 15000
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ11021
Complementary NPN transistor
Replacement and Equivalent for MJ11021 transistor
Lead-free Version
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