MJ11017 Bipolar Transistor

Characteristics of MJ11017 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 400 to 15000
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11017

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ11017 is the MJ11018.

Replacement and Equivalent for MJ11017 transistor

You can replace the MJ11017 with the 2SA908, 2SA909, 2SB722, MJ11019, MJ11021 or MJ11021G.
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