MG6330-R Bipolar Transistor

Characteristics of MG6330-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 260 V
  • Collector-Base Voltage, max: 260 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of MG6330-R

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MG6330-R is the MG9410-R.

Replacement and Equivalent for MG6330-R transistor

You can replace the MG6330-R with the 2SC3320, 2SC6145A, 2SC6145A-Y, 2SD1313 or MG6331-R.
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