MG6330-R Bipolar Transistor
Characteristics of MG6330-R Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 260 V
- Collector-Base Voltage, max: 260 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 60 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of MG6330-R
Complementary PNP transistor
Replacement and Equivalent for MG6330-R transistor
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