MG6331-R Bipolar Transistor
Characteristics of MG6331-R Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 260 V
- Collector-Base Voltage, max: 260 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 18 A
- Collector Dissipation: 300 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 60 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of MG6331-R
Complementary PNP transistor
Replacement and Equivalent for MG6331-R transistor
If you find an error please send an email to mail@el-component.com