MG6331-R Bipolar Transistor

Characteristics of MG6331-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 260 V
  • Collector-Base Voltage, max: 260 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 18 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of MG6331-R

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MG6331-R is the MG9411-R.

Replacement and Equivalent for MG6331-R transistor

You can replace the MG6331-R with the 2SD1313.
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