MG9410-R Bipolar Transistor
Characteristics of MG9410-R Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -260 V
- Collector-Base Voltage, max: -260 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 35 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of MG9410-R
Complementary NPN transistor
Replacement and Equivalent for MG9410-R transistor
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