KTC8550S-D Bipolar Transistor

Characteristics of KTC8550S-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -35 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular KTC8550D transistor

Pinout of KTC8550S-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC8550S-D transistor can have a current gain of 150 to 300. The gain of the KTC8550S will be in the range from 100 to 300, for the KTC8550S-C it will be in the range from 100 to 200.

Marking

The KTC8550S-D transistor is marked as "BLD".

Complementary NPN transistor

The complementary NPN transistor to the KTC8550S-D is the KTC8050S-D.

KTC8550S-D Transistor in TO-92 Package

The KTC8550D is the TO-92 version of the KTC8550S-D.

Replacement and Equivalent for KTC8550S-D transistor

You can replace the KTC8550S-D with the 2SA1621, BCW67, BCW68, FMMT549, FMMT549A, FMMT591, FMMT591Q, KTA1298, MMBT2907, MMBT2907A, MMBT4354 or MMBT4355.
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