KTC8550S Bipolar Transistor
Characteristics of KTC8550S Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -30 V
- Collector-Base Voltage, max: -35 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.8 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 120 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular KTC8550 transistor
Pinout of KTC8550S
Classification of hFE
Complementary NPN transistor
KTC8550S Transistor in TO-92 Package
Replacement and Equivalent for KTC8550S transistor
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