KSB1149-G Bipolar Transistor

Characteristics of KSB1149-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 6000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB1149-K transistor

Pinout of KSB1149-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB1149-G transistor can have a current gain of 6000 to 20000. The gain of the KSB1149 will be in the range from 2000 to 20000, for the KSB1149-O it will be in the range from 2000 to 5000, for the KSB1149-Y it will be in the range from 4000 to 12000.

Replacement and Equivalent for KSB1149-G transistor

You can replace the KSB1149-G with the BD682, BD682G or MJE254.
If you find an error please send an email to mail@el-component.com