BDW83B Bipolar Transistor

Characteristics of BDW83B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247

Pinout of BDW83B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW83B is the BDW84B.

Replacement and Equivalent for BDW83B transistor

You can replace the BDW83B with the BD245B, BD245C, BD249B, BD249C, BDW83C, BDW83D or TIP35CA.
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