BDW84B Bipolar Transistor

Characteristics of BDW84B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247

Pinout of BDW84B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDW84B is the BDW83B.

Replacement and Equivalent for BDW84B transistor

You can replace the BDW84B with the BD246B, BD246C, BD250B, BD250C, BDW84C, BDW84D or TIP36CA.
If you find an error please send an email to mail@el-component.com