BDW83D Bipolar Transistor

Characteristics of BDW83D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247

Pinout of BDW83D

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW83D is the BDW84D.
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