BD249B Bipolar Transistor
Characteristics of BD249B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 90 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 25 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 25
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3P
Pinout of BD249B
Complementary PNP transistor
Replacement and Equivalent for BD249B transistor
Equivalent
- TO-220 package, BD244A: 65 watts
- TO-3P package, BD245: 80 watts
- TO-3P package, BD245C: 80 watts
- TO-3P package, BD246B: 80 watts
- TO-3P package, BD250: 125 watts
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