BDW52C Bipolar Transistor

Characteristics of BDW52C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BDW52C

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDW52C is the BDW51C.

Replacement and Equivalent for BDW52C transistor

You can replace the BDW52C with the 2N6287, 2N6287G, 2SA1041, 2SA1043, 2SA907, 2SA908, 2SA909, 2SB722, 2SB723, 2SB723-C, BD318, MJ11017, MJ11019, MJ15002, MJ15002G, MJ15004 or MJ15004G.
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