BDW51C Bipolar Transistor

Characteristics of BDW51C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BDW51C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW51C is the BDW52C.

Replacement and Equivalent for BDW51C transistor

You can replace the BDW51C with the 2N6284, 2N6284G, 2SC1584, 2SC1585, 2SC1586, 2SC2431, 2SC2433, 2SD753, 2SD753-C, BD317, MJ11018, MJ11020, MJ15001, MJ15001G, MJ15003 or MJ15003G.
If you find an error please send an email to mail@el-component.com