BDW52B Bipolar Transistor

Characteristics of BDW52B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BDW52B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDW52B is the BDW51B.

Replacement and Equivalent for BDW52B transistor

You can replace the BDW52B with the 2N6286, 2N6286G, 2N6287, 2N6287G, 2SA1041, 2SA1043, 2SA907, 2SA908, 2SB722, BD316, BD318, BDW52C, MJ11017, MJ15002, MJ15002G, MJ15004 or MJ15004G.
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