BDW51B Bipolar Transistor

Characteristics of BDW51B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 750 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BDW51B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW51B is the BDW52B.

Replacement and Equivalent for BDW51B transistor

You can replace the BDW51B with the 2N6283, 2N6283G, 2N6284, 2N6284G, 2N6472, 2SC1584, 2SC1585, 2SC2431, 2SC2433, 2SD797, BD315, BD317, BDW51C, KD503, MJ11018, MJ15001, MJ15001G, MJ15003 or MJ15003G.
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